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silicon carbide diode

Cree C3D03060E Silicon Carbide Schottky Diode - Z-Rec

2016-4-14 · 1 C3D36E Re. C 4216 C3D03060E Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 600-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on V F Benefits • Replace Bipolar with Unipolar Rectifiers

Silicon Carbide Diodes - STMicroelectronics

2019-5-11 · ST’s silicon-carbide diodes take advantage of SiC’s superior physical characteristics over Si, with 4 times better dynamic characteristics and 15% less forward voltage, VF. Their low reverse recovery characteristics make ST’s silicon-carbide diodes a key contributor to energy savings in SMPS appliions and in emerging domains such as solar energy conversion, EV or HEV charging stations

Silicon Carbide (SiC) Power Modules | SEMIKRON

Silicon Carbide Power Modules Benefits. SEMIKRON‘s hybrid and full silicon carbide power modules coine the benefits of proven industry standard power modules with SEMIKRON packaging technologies. Thanks to various packaging optimizations, all the benefits that silicon carbide …

Silicon Carbide Power Schottky Diode - GeneSiC

2019-4-30 · GeneSiC Semiconductor offers their Silicon Carbide Power Schottky diode. The advantage of these products is improved circuit efficiency (Lower overall cost), low switching losses, ease of paralleling devices without thermal runaway, smaller heat …

Silicon Carbide Schottky Diode - Cree/Wolfspeed - …

2019-5-1 · Silicon Carbide Schottky Diode. Silicon Carbide Schottky Diode. Cree/Wolfspeed. Cree is the world’s leading manufacturer of silicon carbide based diodes for power control and management. Cree’s family of Z-Rec™ rectifiers has essentially no reverse recovery at 600 V, 650 V and 1200 V breakdown and is targeted for appliions where low

SiC Schottky Diodes - Littelfuse

Silicon Carbide Schottky Diodes Compared to standard silicon bipolar diodes, SiC Schottky Diodes have negligible reverse recovery, which reduces switching losses and enables dramatic increases in …

Full SiC | SEMIKRON

The full silicon carbide power modules are available from 20A to 540A in 1200V, with and without anti-parallel free-wheeling Schottky diode. The standard topology sixpacks in classic configuration but split output is also an option that allows for flexible adaption to your appliion.

Silicon Carbide (SiC) Semiconductor | Microsemi

Silicon Carbide (SiC) semiconductors are an innovative new option for power electronic designers looking to improve system efficiency, smaller form factor and higher operating temperature in products covering industrial, medical, mil-aerospace, aviation, and communiion market segments.

Silicon Carbide Schottky Barrier Diodes

2018-3-23 · Silicon Carbide Schottky Barrier Diode 600 V 1.5 V <15 ns (1) @25°C. Si-based diodes have a wide increase at higher temperatures and are typically limited to 150°C operation. Table 1. Comparison of key parameters for silicon and SiC diodes. ROHM Semiconductor SiC Schottky Barrier Diodes 1.

Silicon carbide diode

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Silicon Carbide Schottky Diodes | Farnell element14

Silicon Carbide Schottky Diodes at Farnell element14. Competitive prices from the leading Silicon Carbide Schottky Diodes distributor. Check our stock now!

Silicon carbide - Wikipedia

2019-5-10 · Silicon carbide is an important material in TRISO-coated fuel particles, the type of nuclear fuel found in high temperature gas cooled reactors such as the Pebble Bed Reactor. A layer of silicon carbide gives coated fuel particles structural support and …

Data Sheets: Silicon Carbide (SiC) Diodes - onsemi.cn

important - read before downloading, copying, installing, or using. do not download, copy, install, or use this content until you (the "licensee") have carefully read the following terms and conditions.

FFSH50120A Silicon Carbide Schottky Diode

Diode 1200 V, 50 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of

Silicon Carbide Schottky Barrier Diode_SCS315AJ_

Silicon Carbide Schottky Barrier Diode_SCS315AJ () Low forward voltage, negligible recovery time/current. Suitable for switch mode power supply, uninterruptible power

STPSC Schottky Silicon-Carbide Diodes - STMicro | …

2019-5-11 · STMicroelectronics Schottky Silicon-Carbide Diodes take advantage of SiC''s superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (VF). The low reverse recovery characteristics make ST''s silicon-carbide diodes a key

Solitron Devices announces 1200V Silicon Carbide …

West Palm Beach, FL – April 2 ,2019. Solitron Devices is pleased to announce the SDD10120 1200V Silicon Carbide Schottky Diode. The SDD10120 features two 1200V, 10A silicon carbide (SiC) diodes packaged in an industry standard 3-lead TO-247.. Featuring extremely low switching losses due to nearly zero reverse recovery and low forward voltage drop the SDD10120 is ideal for aerospace and

Products: Silicon Carbide Power Diodes - Alter …

2019-4-28 · The Silicon Carbide power diodes were specifically designed for protection of solar cells arrays in solar panels mounted in satellites and space exploration modules.The first batches of devices are currently used for two European Space Agency missions, BepiColoo and Solar Orbiter.

FFSP3065B-F085: Automotive Silicon Carbide (SiC

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.

Silicon Carbide Schottky Diode - Cree/Wolfspeed - …

2019-5-1 · Silicon Carbide Schottky Diode. Silicon Carbide Schottky Diode. Cree/Wolfspeed. Cree is the world’s leading manufacturer of silicon carbide based diodes for power control and management. Cree’s family of Z-Rec™ rectifiers has essentially no reverse recovery at 600 V, 650 V and 1200 V breakdown and is targeted for appliions where low

Silicon Carbide Diode Characteristics : Silicon Carbide Diode Characteristics . Requires: Blaze In this example, a SiC diode is simulated to demonstrate the Atlas capabilities to handle wide band gap semiconductor devices under room and elevated temperature conditions. The interest toward SiC technologies is growing due to the thermal and electronic properties of

Data Sheets: Silicon Carbide (SiC) Diodes - onsemi.cn

important - read before downloading, copying, installing, or using. do not download, copy, install, or use this content until you (the "licensee") have carefully read the following terms and conditions.

Silicon Carbide Power Schottky Diode - GeneSiC

2019-4-30 · GeneSiC Semiconductor offers their Silicon Carbide Power Schottky diode. The advantage of these products is improved circuit efficiency (Lower overall cost), low switching losses, ease of paralleling devices without thermal runaway, smaller heat …

LSIC2SD065C06A Series - SiC Schottky Diodes Silicon

This series of silicon carbide (SiC) Schottky diodes has neg­ligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 ° C. These diodes series are ideal for appliions where improvements in efficiency, reliability, and thermal management are desired. Features: AEC-Q101 qualified

Silicon Carbide (SiC) Semiconductor | Microsemi

Silicon Carbide (SiC) semiconductors are an innovative new option for power electronic designers looking to improve system efficiency, smaller form factor and higher operating temperature in products covering industrial, medical, mil-aerospace, aviation, and communiion market segments.

Silicon Carbide (SiC) - Infineon Technologies

2019-5-6 · This latest development in the Silicon Carbide CoolSiC™ diode family is built upon the distinctive characteristics of the G5, providing reliability, quality, and increased efficiency. They are aiming at current and future appliions in server and PC power, telecom equipment power and PV inverters.

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